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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:31 Issue:3 Help

In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

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7 Author(s)
Wan, H.J. ; Dept. of Microelectron., Fudan Univ., Shanghai, China ; Zhou, P. ; Ye, L. ; Lin, Y.Y.
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The compliance-current dependence of the resistive-switching behaviors is investigated in TaN/CuxO/Cu memory devices with 1R architecture and 1T1R architecture, respectively. The correlation of reset current I reset and on-state resistance R on can be verified by adjusting the compliance current I comp. Meanwhile, I reset and R on become independent on I comp in the 1R architecture when I comp is below 1 mA. A serious compliance-current overshoot phenomenon is in situ observed in 1R-architecture device, and it remarkably affects the resistive-switching characteristics because the compliance current dominates the memory behaviors. Therefore, resistive-switching investigation based on 1T1R architecture is much more reliable.

Published in:
Electron Device Letters, IEEE  (Volume:31 ,  Issue: 3 )

Date of Publication: March 2010

Page(s):
246 - 248
ISSN :
0741-3106
INSPEC Accession Number:
11142211
Digital Object Identifier :
10.1109/LED.2009.2039694
Product Type:
Journals & Magazines
Date of Publication :
08 February 2010
Date of Current Version :
22 February 2010
Issue Date :
March 2010
Sponsored by :
IEEE Electron Devices Society

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