By Topic

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline \hbox {Al}_{2}\hbox {O}_{3}\hbox {-Based} Devices Studied With AFM-Related Techniques

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Mario Lanza ; Department of Electronic Engineering , Universitat Autònoma de Barcelona, Cerdanyola del Vallès, Bellaterra, Spain ; Marc Porti ; Montserrat Nafría ; Xavier Aymerich
more authors

In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al2O3 stacks for flash memories on the annealing temperature (TA). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on TA. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks.

Published in:

IEEE Transactions on Nanotechnology  (Volume:10 ,  Issue: 2 )