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Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline \hbox {Al}_{2}\hbox {O}_{3}\hbox {-Based} Devices Studied With AFM-Related Techniques

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11 Author(s)
Lanza, M. ; Dept. of Electron. Eng., Univ. Autonoma de Barcelona, Bellaterra, Spain ; Porti, M. ; Nafría, M. ; Aymerich, X.
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In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al2O3 stacks for flash memories on the annealing temperature (TA). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on TA. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:10 ,  Issue: 2 )

Date of Publication:

March 2011

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