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Electrothermal Studies of FD SOI Devices That Utilize a New Theoretical Model for the Temperature and Thickness Dependence of the Thermal Conductivity

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3 Author(s)
Vasileska, D. ; Arizona State Univ., Tempe, AZ, USA ; Raleva, K. ; Goodnick, S.M.

In this brief, we report on the effects of the spatial and temperature dependence of the thermal conductivity in thin Si films on the electrothermal simulation of nanoscale silicon-on-insulator (SOI) devices. The electrothermal simulator is based on a combined ensemble Monte Carlo device simulator coupled to moment expansion of the phonon Boltzmann transport equations. In particular, we account for boundary scattering and the finite thickness of the SOI layer in reducing its thermal conductivity. The reduced thermal conductivity leads to a higher hot spot temperature in the device, with a corresponding degradation of the source-drain current.

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Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 3 )