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Atomic structure of a Ni diffused Si (001) surface layer: Precursor to formation of NiSi2 at low temperature

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1 Author(s)
Ikarashi, Nobuyuki ; Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara 229-1198, Japan

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The atomic structure in a Ni-diffused Si (001) surface layer was determined by using aberration-corrected scanning-transmission electron microscopy (STEM). The STEM investigation revealed three key findings. First, Ni atoms occupy the tetrahedral interstitial voids of a Si crystal at an occupancy factor of about 0.5. Second, the Si atoms in the surface layer can dissociate from their lattice site at a low substrate temperature (300 °C). Third, CaF2-type NiSi2 is formed at that substrate temperature and is lattice matched to the surface layer.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 3 )