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Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes

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10 Author(s)
Han, Sang-Heon ; Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea ; Cho, Chu-Young ; Lee, Sang-Jun ; Park, Tae-Young
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We report on Mg doping in the barrier layers of InGaN/GaN multiple quantum wells (MQWs) and its effect on the properties of light-emitting diodes (LEDs). Mg doping in the barriers of MQWs enhances photoluminescence intensity, thermal stability, and internal quantum efficiency of LEDs. The light output power of LEDs with Mg-doped MQW barriers is higher by 19% and 27% at 20 and 200 mA, respectively, than that of LEDs with undoped MQW barriers. The improvement in output power is attributed to the enhanced hole injection to well layers in MQWs with Mg-doped barriers.

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Applied Physics Letters  (Volume:96 ,  Issue: 5 )