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This paper presents a compact threshold voltage model for narrow channel MOSFETs for the purpose of VLSI circuit simulation. A nano-scale trench isolated MOSFET has been considered whose gate length and width are in the sub 65 nm regime. The developed model has been validated by comparing the results predicted from the derived model with those obtained using the device simulator of TCAD Sentaurus.
Date of Conference: 14-16 Dec. 2009