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Modeling of low-threshold vertical cavity surface emitting lasers for optical interconnects

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5 Author(s)
Bissessur, H. ; P&I Lab., Tokyo Inst. of Technol., Yokohama, Japan ; Mukaihara, T. ; Abe, M. ; Koyama, F.
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Recently, the threshold of 980 nm VCSELs with an oxide confinement structure has been reduced below 100 /spl mu/A. We model their ultimate threshold performance as well as secondary mode discrimination, and estimate the carrier diffusion length in our devices. The self-consistent model takes into account carrier diffusion as well as various optical processes like scattering or diffraction, and uses a logarithmic gain model for quantum wells. The active layer consists of three 80 /spl Aring/ thick InGaAs strained quantum wells separated by 100 /spl Aring/ GaAs barriers.

Published in:

Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:

Date of Conference:

5-9 Aug. 1996