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Operation and Optimization of Silicon-Diode-Based Optical Modulators

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8 Author(s)
Steven J. Spector ; Lincoln Laboratory, Massachusetts Institute of Technology (MIT), Lexington, USA ; Cheryl M. Sorace ; Michael W. Geis ; Matthew E. Grein
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An optical modulator in silicon based on a diode structure has been operated in both forward and reverse bias. This modulator achieves near state-of-the-art performance in both modes, thereby making this device ideal for comparing the two modes of operation. In reverse bias, the device has a V¿L of 4.0 V·cm and a bandwidth of 26 GHz. In forward bias, the device is very sensitive, a V¿L as low as 0.0025 V·cm has been achieved, but the bandwidth is only 100 MHz. A new geometry for a reverse-bias device is proposed, and it is predicted to achieve a V¿L of 0.5 V·cm.

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:16 ,  Issue: 1 )