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Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

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4 Author(s)
Cheng-Huang Kuo ; Dept. of Opt. & Photonics, Nat. Central Univ., Jhongli, Taiwan ; Y. K. Fu ; G. C. Chi ; Shoou-Jinn Chang

GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.

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IEEE Journal of Quantum Electronics  (Volume:46 ,  Issue: 3 )