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Low-Operating-Voltage Polymer Thin-Film Transistors Based on Poly(3-Hexylthiophene) With Hafnium Oxide as the Gate Dielectric

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4 Author(s)
Liu, Y.R. ; Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China ; Deng, L.F. ; Yao, R.H. ; Lai, P.T.

The effects of hafnium oxide (HfO2) gate dielectric annealing treatment in oxygen (O2) and ammonia (NH3) ambient on the electrical performance of polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are investigated. The PTFTs with HfO2 gate dielectric and also octadecyltrichlorosilane surface modification, prepared by spin-coating process, exhibit good performance, such as a small threshold voltage of -0.5 V and an operating voltage as low as -4 V. Results indicate that the PTFT with NH3-annealed HfO2 shows higher carrier mobility, larger on/off current ratio, smaller subthreshold swing, and lower threshold voltage than the PTFT with O2-annealed HfO2. Capacitance-voltage analysis for metal-polymer-oxide-silicon structures indicates that the better electrical performance of the PTFT with NH3-annealed HfO2 is attributed to improved dielectric/polymer interface and reduced series resistance in the transistor.

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Device and Materials Reliability, IEEE Transactions on  (Volume:10 ,  Issue: 2 )