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Browse Journals & Magazines > Applied Physics Letters ...> Volume:96 Issue:4 Help

Electrical characteristics of an organic bistable device using an Al/Alq3/nanostructured MoO3/Alq3/p+-Si structure

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3 Author(s)
Tzu-Yueh Chang ; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan ; Cheng, You-Wei ; Po-Tsung Lee

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The electrical properties of a device with an Al/Alq3/nanostructured MoO3/Alq3/p+-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO3 nanoclusterlike layer interposed between the Alq3 thin films. When the device was switched to high conductance, a space-charge field dominated carrier transportation of the device. The space-charge field was resulted from charges trapped in the MoO3 nanoclusterlike layer. Both retention measurement and write-read-erase-read cycles of the device are also provided.

Published in:
Applied Physics Letters  (Volume:96 ,  Issue: 4 )

Date of Publication: Jan 2010

Page(s):
043309 - 043309-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3299265
Product Type:
Journals & Magazines
Date of Current Version :
05 February 2010
Issue Date :
Jan 2010

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