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High data rate 850 nm oxide VCSEL for 20 Gbit/s application and beyond

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4 Author(s)
Chen Ji ; Avago Technologies, III-V device R&D group, Fiber Optics Product Division, 350 West Trimble Rd. San Jose, CA 95131, USA ; Jingyi Wang ; David Söderström ; Laura Giovane

In this paper we report a 850nm oxide VCSEL operating at 20 Gbit/s (PRBS31) with a 5 dB Extinction Ratio, based on a volume manufacturing platform with MOCVD grown GaAs/AlGaAs epi-material. We present detailed time and frequency domain VCSEL characterization results, and a finite element simulation showing good agreement with experimental data.

Published in:

2009 Asia Communications and Photonics conference and Exhibition (ACP)  (Volume:2009-Supplement )

Date of Conference:

2-6 Nov. 2009