By Topic

A 0.7- \mu m BiCMOS Electrostatic Energy-Harvesting System IC

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Torres, E.O. ; Analog, Power & Energy, IC Res. Lab., Georgia Tech, Atlanta, GA, USA ; Rincon-Mora, G.A.

Self-powered microsystems like wireless microsensors and biomedical implants derive power from in-package minibatteries that can only store sufficient energy to sustain the system for a short life. The environment, however, is a rich source of energy that, when harnessed, can replenish the otherwise exhausted battery. The problem is harvesters generate low power levels and the electronics required to transfer the energy to charge a battery can easily demand more than the power produced. This paper presents how a 1 × 1 mm2 0.7-μm BiCMOS vibration-supplied electrostatic energy-harvesting system IC produces usable energy. The IC charges and holds the voltage across a vibration-driven variable capacitor CVAR so that ambient kinetic energy can induce CVAR to generate current into the battery when capacitance decreases, as the plates separate. The precharger, harvester, monitoring, and control microelectronics draw enough power to operate, yet allow the system to yield (experimentally) 1.27, 2.14, and 2.87 nJ per vibration cycle for battery voltages at 2.7, 3.5, and 4.2 V, which at 30 Hz produce 38.1, 64.2, and 86.1 nW. Experiments further show that the harvester system prototype charges 1 μF (emulating a small thin-film Li Ion) from 3.5 to 3.81 V in 35 s.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:45 ,  Issue: 2 )