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Influence of RTA and LTA on the Optical Propagation Loss in Polycrystalline Silicon Wire Waveguides

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4 Author(s)
Shiyang Zhu ; Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore ; Lo, G.Q. ; Ye, J.D. ; Kwong, D.L.

To provide flexibility in implementing polySi devices in Si optoelectronic integrated circuits, polySi wire waveguides were fabricated with various low thermal budget solid-phase crystallization (SPC) approaches, i.e., spike rapid thermal annealing (RTA) at 1050??C for < 1 s, low-temperature annealing (LTA) at 600??C for 15 h, or a combination of both with different sequences. The approach of first LTA and then RTA reaches a relatively low optical loss at 1550 nm: ~ 9.8 dB/cm in 300-nm-wide polySi waveguides after an additional forming gas annealing at 420??C to passivate the dangling bonds, close to that fabricated with the conventional high thermal budget SPC.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 7 )