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To provide flexibility in implementing polySi devices in Si optoelectronic integrated circuits, polySi wire waveguides were fabricated with various low thermal budget solid-phase crystallization (SPC) approaches, i.e., spike rapid thermal annealing (RTA) at 1050??C for < 1 s, low-temperature annealing (LTA) at 600??C for 15 h, or a combination of both with different sequences. The approach of first LTA and then RTA reaches a relatively low optical loss at 1550 nm: ~ 9.8 dB/cm in 300-nm-wide polySi waveguides after an additional forming gas annealing at 420??C to passivate the dangling bonds, close to that fabricated with the conventional high thermal budget SPC.