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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k /Metal Gates CMOS FinFETs for Multi- V_{\rm Th} Engineering

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6 Author(s)
Hussain, M.M. ; Dept. of Electr. Eng., King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia ; Smith, C.E. ; Rusty Harris, H. ; Young, Chadwin D.
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Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ~40 mV/V), nearly symmetric VTh, low Tinv (~1.4 nm), and high Ion (~780 ¿A/¿m) for N/PMOS without any intentional strain enhancement.

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Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 3 )