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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k /Metal Gates CMOS FinFETs for Multi- V_{\rm Th} Engineering

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6 Author(s)
Muhammad Mustafa Hussain ; Department of Electrical Engineering, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia ; Casey E. Smith ; H. Rusty Harris ; Chadwin D. Young
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Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ~40 mV/V), nearly symmetric VTh, low Tinv (~1.4 nm), and high Ion (~780 ¿A/¿m) for N/PMOS without any intentional strain enhancement.

Published in:

IEEE Transactions on Electron Devices  (Volume:57 ,  Issue: 3 )