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Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET

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3 Author(s)
Hu, V.P.-H. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Yu-Sheng Wu ; Pin Su

This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poisson's equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length ( Lg) to channel thickness ( Tch) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness ( TBI) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:10 ,  Issue: 2 )

Date of Publication:

March 2011

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