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Design and performance evaluation of a low-power data-line SRAM sense amplifier

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4 Author(s)
Haitao Fu ; Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Kiat-Seng Yeo ; Anh-Tuan Do ; Zhi-Hui Kong

The SRAM which functions as the cache for system-on-chip is vital in the electronic industry. The heavy bit-and data-line capacitances are the major road blocks to its performance. A high-performance SRAM is proposed using a 1.8 V/0.18 ¿m CMOS standard process from Chartered Semiconductor Manufacturing Ltd (CHRT). It incorporates a discharging mechanism that helps eliminating the waiting time during the read operation, hence offering a faster sensing speed and lower power consumption. Our post-layout simulation results have shown that it improves the sensing speed and power consumption by 51.4%, and 62.47%, respectively when compared with the best published design. The total power-delay-product (PDP) is 81.79% better. Furthermore, it can operate at a supply voltage as low as 0.8 V with a high stability to the bit-line capacitances variation and mismatch.

Published in:

Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on

Date of Conference:

14-16 Dec. 2009