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3D detectors with electrodes penetrating through the entire silicon substrate have many advantages over conventional planar silicon technology, for example, high radiation tolerance. High aspect ratio through-wafer holes are essential in such fabrication, and deep reactive ion etching (DRIE) is used. A series of DRIE processes were tested and optimised to achieve the required aspect ratio, and in 5-Â¿m wide trenches, aspect ratios of 58:1 were achieved.
Date of Conference: Oct. 24 2009-Nov. 1 2009