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High aspect ratio deep RIE for novel 3D radiation sensors in high energy physics applications

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7 Author(s)
Kok, A. ; SINTEF MiNaLab, Oslo, Norway ; Hansen, T.-E. ; Hansen, T. ; Jensen, G.U.
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3D detectors with electrodes penetrating through the entire silicon substrate have many advantages over conventional planar silicon technology, for example, high radiation tolerance. High aspect ratio through-wafer holes are essential in such fabrication, and deep reactive ion etching (DRIE) is used. A series of DRIE processes were tested and optimised to achieve the required aspect ratio, and in 5-¿m wide trenches, aspect ratios of 58:1 were achieved.

Published in:

Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE

Date of Conference:

Oct. 24 2009-Nov. 1 2009