Referenced Items are not available for this document.
3D detectors with electrodes penetrating through the entire silicon substrate have many advantages over conventional planar silicon technology, for example, high radiation tolerance. High aspect ratio through-wafer holes are essential in such fabrication, and deep reactive ion etching (DRIE) is used. A series of DRIE processes were tested and optimised to achieve the required aspect ratio, and in 5-¿m wide trenches, aspect ratios of 58:1 were achieved.
Published in:
Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE
Date of Conference: Oct. 24 2009-Nov. 1 2009
- Page(s):
- 1623 - 1627
- ISSN :
- 1095-7863
- E-ISBN :
- 978-1-4244-3962-1
- Print ISBN:
- 978-1-4244-3961-4
- INSPEC Accession Number:
- 11135479
- Conference Location :
- Orlando, FL
- Digital Object Identifier :
- 10.1109/NSSMIC.2009.5402256
- Product Type:
- Conference Publications
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