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The very intense radiation environment of the planned Â¿Compressed Baryonic MatterÂ¿ (CBM) experiment at the international research centre Â¿Facility for Antiproton and Ion ResearchÂ¿ (FAIR) makes radiation hardness a central issue for the Silicon Tracking System (STS). Detailed simulations have been carried out to understand the radiation damage in Double Sided Silicon Strip Detectors (DSSD) to be used for CBM STS. This includes both Technology CAD (TCAD) simulations as well as SPICE circuit simulation. To confirm the validity of these simulation packages, we plan to compare the real measurements with the simulated data.