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Development of radiation hard silicon sensors for the CBM silicon tracking system using simulation approach

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3 Author(s)
Chatterji, S. ; GSI Helmholtz Centre for Heavy Ion Res. GmbH, Darmstadt, Germany ; Lymanets, A. ; Heuser, J.M.

The very intense radiation environment of the planned ¿Compressed Baryonic Matter¿ (CBM) experiment at the international research centre ¿Facility for Antiproton and Ion Research¿ (FAIR) makes radiation hardness a central issue for the Silicon Tracking System (STS). Detailed simulations have been carried out to understand the radiation damage in Double Sided Silicon Strip Detectors (DSSD) to be used for CBM STS. This includes both Technology CAD (TCAD) simulations as well as SPICE circuit simulation. To confirm the validity of these simulation packages, we plan to compare the real measurements with the simulated data.

Published in:

Nuclear Science Symposium Conference Record (NSS/MIC), 2009 IEEE

Date of Conference:

Oct. 24 2009-Nov. 1 2009

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