By Topic

Silicon nanowires synthesis on a submicronic terminal: Structural and electrical characterization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
8 Author(s)
Abed, Hichem ; CINaM-CNRS UPR 3118, Aix-Marseille Université, Campus de Luminy-Case 913, 13288 Marseille Cedex 9, France ; Sahaf, Houda ; Reguer, Alan ; Rochdi, Nabil
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In this work, we investigate localized silicon nanowires synthesis in a room temperature-controlled silane filled chamber using submicronic resistors as heating devices. These resistors consist in circuit-connected W wires obtained, on silicon oxide substrates, by focused ion beam induced deposition (FIBID) technology. Our study demonstrates that the morphology of the synthesized nanowires is temperature and time dependent revealing a thermal gradient but also both vapor-liquid-solid and vapor-solid growth effects. Typical silicon nanowires dimensions are a length of 1–2 μm and diameters of 30–40 nm. Structural characterization is performed by high resolution transmission electron microscopy using high energy electron transparent self-supported silicon nitride membranes. Electrical characteristics of FIBID- and self-connected nanowires are obtained. In both cases, they exhibit rectifying behavior.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 2 )