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Browse Journals & Magazines > Applied Physics Letters ...> Volume:96 Issue:4 Help

Understanding the role of tunneling barriers in organic spin valves by hard x-ray photoelectron spectroscopy

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10 Author(s)
Borgatti, F. ; ISMN-CNR, via Gobetti 101, Bologna, Italy ; Bergenti, I. ; Bona, F. ; Dediu, V.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3285179 

We present an ex situ, nondestructive chemical characterization of deeply buried organic-inorganic interfaces using hard x-ray photoelectron spectroscopy. Co/Alq3 and Co/AlOx/Alq3 interfaces were studied in order to determine the role of a thin (1–2 nm) AlOx interdiffusion barrier in organic spin valves. Interfacial Alq3, 15 nm below the surface, exhibits strong sensitivity to the electronic structure of the interfacial region and to the presence of the AlOx. In addition to reducing Co–Alq3 interdiffusion, we find that the barrier prevents charge donation from the Co to the interfacial Alq3, thus preventing the formation of Alq3 anions within the interface region.

Published in:
Applied Physics Letters  (Volume:96 ,  Issue: 4 )

Date of Publication: Jan 2010

Page(s):
043306 - 043306-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3285179
Product Type:
Journals & Magazines
Date of Current Version :
29 January 2010
Issue Date :
Jan 2010

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