Referenced Items are not available for this document.
A single-pole double-throw novel switch device in 0.18 ¿m SOI complementary metal-oxide semiconductor (CMOS) process is developed for 0.9 Ghz wireless GSM systems. The layout of the device is optimized keeping in mind the parameters of interest for the RF switch. A subcircuit model, with the standard surface potential (PSP) model as the intrinsic FET model along with the parasitic elements is built to predict the Ron and Coff of the switch. The measured data agrees well with the model. The eight FET stacked switch achieved an Ron of 2.5 ohms and an Coff of 180 fF.
Published in:
VLSI Design, 2010. VLSID '10. 23rd International Conference on
Date of Conference: 3-7 Jan. 2010
- Page(s):
- 194 - 199
- ISSN :
- 1063-9667
- Print ISBN:
- 978-1-4244-5541-6
- INSPEC Accession Number:
- 11133958
- Conference Location :
- Bangalore
- Digital Object Identifier :
- 10.1109/VLSI.Design.2010.64
- Product Type:
- Conference Publications
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