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Performance Evolutions of Carrier Depletion Silicon Optical Modulators: From p-n to p-i-p-i-n Diodes

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4 Author(s)
Rasigade, G. ; Inst. of Fundamental Electron., Univ. of Paris-Sud XI, Orsay, France ; Marris-Morini, D. ; Vivien, L. ; Cassan, Eric

The performance evolution of p-n, p-i-n, and p-i-p-i-n optical modulators based on free-carrier concentration variation is studied. Main figures of merit are recalled for such devices and used to compare one structure to another. The modulation efficiency, optical loss, and -3 dB cutoff frequency are thus optimized for each sort of studied junction. General performance results are presented and discussed at the end.

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:16 ,  Issue: 1 )