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Metal-organic chemical vapor deposition of aluminum oxide thin films via pyrolysis of dimethylaluminum isopropoxide

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6 Author(s)
Schmidt, Benjamin W. ; Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, Tennessee 37235 ; Sweet, William J. ; Bierschenk, Eric J. ; Gren, Cameron K.
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Metal-organic chemical vapor deposited aluminum oxide films were produced via pyrolysis of dimethylaluminum isopropoxide in a high vacuum reaction chamber in the 417–659 °C temperature range. Deposited films contained aluminum, oxygen, and carbon, and the carbon-to-aluminum ratio increased with increased deposition temperature. Aluminum-carbon bonding was observed in films deposited at 659 °C by x-ray photoelectron spectroscopy, but not in films deposited at 417 °C. The apparent activation energy in the surface reaction controlled regime was 91 kJ/mol. The O/Al and C/Al ratios in the deposited films were greater and less than, respectively, the ratios predicted by the stoichiometry of the precursor. Flux analysis of the deposition process suggested that the observed film stoichiometries could be explained by the participation of oxygen-containing background gases present in the reactor at its base pressure.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:28 ,  Issue: 2 )

Date of Publication:

Mar 2010

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