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Coplanar millimeter-wave ICs for W-band applications using 0.15 μm pseudomorphic MODFETs

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10 Author(s)
M. Schlechtweg ; Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany ; W. H. Haydl ; A. Bangert ; J. Braunstein
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A small signal S-parameter and noise model for the cascode MODFET has been validated up to 120 GHz, allowing predictable monolithic microwave integrated circuit (MMIC) design up to W-band. The potential of coplanar waveguide technology to build compact, high performance system modules is demonstrated by means of passive and active MMIC components. The realized passive structures comprise a Wilkinson combiner/divider and a capacitively loaded ultra miniature branch line coupler. For both building blocks, very good agreement between the measured and modeled data is achieved up to 120 GHz. Based on the accurate design database, two versions of compact integrated amplifiers utilizing cascode devices for application in the 90-120 GHz frequency range were designed and fabricated. The MMICs have 26.3 dB and 20 dB gain at 91 GHz and 110 GHz, respectively. A noise figure of 6.4 dB was measured at 110 GHz. The 90-100 GHz amplifier was integrated with an MMIC tunable oscillator resulting in a W-band source delivering more than 6 dBm output power from 94 to 98 GHz

Published in:

IEEE Journal of Solid-State Circuits  (Volume:31 ,  Issue: 10 )