By Topic

Coplanar millimeter-wave ICs for W-band applications using 0.15 μm pseudomorphic MODFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Schlechtweg, M. ; Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany ; Haydl, W.H. ; Bangert, A. ; Braunstein, J.
more authors

A small signal S-parameter and noise model for the cascode MODFET has been validated up to 120 GHz, allowing predictable monolithic microwave integrated circuit (MMIC) design up to W-band. The potential of coplanar waveguide technology to build compact, high performance system modules is demonstrated by means of passive and active MMIC components. The realized passive structures comprise a Wilkinson combiner/divider and a capacitively loaded ultra miniature branch line coupler. For both building blocks, very good agreement between the measured and modeled data is achieved up to 120 GHz. Based on the accurate design database, two versions of compact integrated amplifiers utilizing cascode devices for application in the 90-120 GHz frequency range were designed and fabricated. The MMICs have 26.3 dB and 20 dB gain at 91 GHz and 110 GHz, respectively. A noise figure of 6.4 dB was measured at 110 GHz. The 90-100 GHz amplifier was integrated with an MMIC tunable oscillator resulting in a W-band source delivering more than 6 dBm output power from 94 to 98 GHz

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:31 ,  Issue: 10 )