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A 10 Gb/s AlGaAs/GaAs HBT high power fully differential limiting distributed amplifier for III-V Mach-Zehnder modulator

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4 Author(s)
Wong, T.Y.K. ; Adv. Technol. Lab., Nortel Technol., Ottawa, Ont., Canada ; Freundorfer, A.P. ; Beggs, B.C. ; Sitch, J.E.

High power, high frequency linear distributed amplifiers are available commercially which provide high power single-ended drive capability from a single-ended source. The signal source can be either analog or digital. Such amplifiers must have stringent gain and phase response requirement over a wide bandwidth in order to maintain good eye quality of the signal. A limiting amplifier, with less stringent bandwidth requirement than analog amplifiers, can be used to amplify pure digital signal source. The purpose of this paper is to present a high power, fully differential limiting distributed amplifier operating at 10 Gb/s. The amplifier has been fabricated with both AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistor (HBT) processes. The amplifier is designed to drive any 50 Ω system. In particular, this amplifier is intended to drive a III-V Mach-Zehnder modulator

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:31 ,  Issue: 10 )