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We present in this letter the most aggressive dimensions reported to date in Ge-channel transistors: pMOSFETs with 30-nm gate length on ultrathin germanium-on-insulator substrates (TGe = 25 nm). By improving both the Ge-enrichment technique and the transistor fabrication process, we demonstrate devices with controlled threshold voltage (Vth) and excellent short-channel effects. Moreover, the low defectivity and the very low thickness of the Ge film lead to a record drain OFF-state leakage for Ge-channel devices (< 1 nA/??m at VDS = -1 V) and thus, to the best ON-state to OFF-state current ratio (ION/IOFF ~5 ?? 105), even at Lg = 55 nm.