By Topic

An Intelligent Run-to-Run Control Strategy for Chemical–Mechanical Polishing Processes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Chyi-Tsong Chen ; Department of Chemical Engineering, Feng Chia University, Seatwen, Taichung, Taiwan ; Yao-Chen Chuang

This paper presents a novel intelligent run-to-run control strategy for chemical-mechanical polishing (CMP) processes. With the help of the recursive least squares identification method for model building, a real-coded genetic algorithm is applied to adaptively adjust the discount coefficients for double exponentially weighted moving average (EWMA) controller. The online intelligent scheme can effectively prevent the CMP processes from reaching unstable condition and can thus achieve high control performance. To demonstrate the effectiveness and applicability of the proposed intelligent run-to-run control strategy, two typical case studies are worked out in this paper. Extensive simulation comparisons with traditional double EWMA run-to-run control were performed. The simulation results show that the proposed intelligent run-to-run control is able to achieve better control performance than conventional schemes, especially for a process that has nonlinearities, process noise, and extra large metrology delays.

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:23 ,  Issue: 1 )