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A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate Transistors

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3 Author(s)
Avinash Sahoo ; Nano Scale Device Research Laboratory, Centre for Electronics Design and Technology, Indian Institute of Science , Bangalore, India ; Pankaj Kumar Thakur ; Santanu Mahapatra

Previous techniques used for solving the 1-D Poisson equation (PE) rigorously for long-channel asymmetric and independent double-gate (IDG) transistors result in potential models that involve multiple intercoupled implicit equations. As these equations need to be solved self-consistently, such potential models are clearly inefficient for compact modeling. This paper reports a different rigorous technique for solving the same PE by which one can obtain the potential profile of a generalized IDG transistor that involves a single implicit equation. The proposed Poisson solution is shown to be computationally more efficient for circuit simulation than the previous solutions.

Published in:

IEEE Transactions on Electron Devices  (Volume:57 ,  Issue: 3 )