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A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate Transistors

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3 Author(s)
Sahoo, A. ; Nano Scale Device Res. Lab., Indian Inst. of Sci., Bangalore, India ; Thakur, P.K. ; Mahapatra, S.

Previous techniques used for solving the 1-D Poisson equation (PE) rigorously for long-channel asymmetric and independent double-gate (IDG) transistors result in potential models that involve multiple intercoupled implicit equations. As these equations need to be solved self-consistently, such potential models are clearly inefficient for compact modeling. This paper reports a different rigorous technique for solving the same PE by which one can obtain the potential profile of a generalized IDG transistor that involves a single implicit equation. The proposed Poisson solution is shown to be computationally more efficient for circuit simulation than the previous solutions.

Published in:

Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 3 )

Date of Publication:

March 2010

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