We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Measurement and Modeling of Carrier Transport Parameters Applicable to SiGe BiCMOS Technology Operating in Extreme Environments

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Moen, K.A. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Cressler, J.D.

We present experimental data and theoretical models that characterize the temperature-dependent behavior of key carrier-transport parameters in a commercial SiGe BiCMOS technology down to cryogenic temperatures and under exposure to ionizing radiation. The theoretical temperature and injection dependencies of Shockley-Read-Hall recombination lifetimes are examined, and experimental measurements of minority carrier lifetime in the substrate are presented. The experimental results are used to develop calibrated theoretical models for use in technology computer-aided design (TCAD). Similarly, the temperature-dependent resistivity is examined, addressing the prevailing theoretical models for both carrier mobility and incomplete ionization of dopants. Experimental measurements of the temperature dependence of resistivity in the p- and n-type regions of a SiGe BiCMOS technology are presented, and calibrated TCAD-relevant models for carrier mobility and incomplete ionization are developed.

Published in:

Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 3 )