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We present experimental data and theoretical models that characterize the temperature-dependent behavior of key carrier-transport parameters in a commercial SiGe BiCMOS technology down to cryogenic temperatures and under exposure to ionizing radiation. The theoretical temperature and injection dependencies of Shockley-Read-Hall recombination lifetimes are examined, and experimental measurements of minority carrier lifetime in the substrate are presented. The experimental results are used to develop calibrated theoretical models for use in technology computer-aided design (TCAD). Similarly, the temperature-dependent resistivity is examined, addressing the prevailing theoretical models for both carrier mobility and incomplete ionization of dopants. Experimental measurements of the temperature dependence of resistivity in the p- and n-type regions of a SiGe BiCMOS technology are presented, and calibrated TCAD-relevant models for carrier mobility and incomplete ionization are developed.