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This paper presents the design and optimisation of a very high quality (Q) factor inductor using MEMS technology for 10 GHz to 20 GHz frequency band. The effects of various parameters of a symmetric inductor structure on the Q-factor and inductance are thoroughly analysed. The inductor has been designed on silicon-on-sapphire (SOS) substrate because it offers superior characteristics of low substrate loss due to the high resistivity of the sapphire material and low capacitive coupling to the substrate. It is also been suspended from the substrate in order to reduce the substrate loss and improved the Q factor. Results indicate that a maximum Q factor of 192 for a 1.13 nH inductance at 12 GHz is achieved after optimising the symmetric inductor.