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Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks

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4 Author(s)
Larionova, Yevgeniya ; Institut für Solarenergieforschung Hameln/Emmerthal (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany ; Mertens, V. ; Harder, N.-P. ; Brendel, R.

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The surface passivation properties of thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks on 2.5 Ω cm n-type Czochralski silicon substrates have been investigated. By annealing these stacks in air we achieve surface recombination velocities (SRV) lower than 2.4 cm/s for thin SiO2 layers. We find a clear correlation between the thickness of the oxide layers and the annealing duration. We also show that the absolute passivation quality of the SiO2/SiN stacks correlates to the SiO2 thickness. We find that the SRV increases with increasing oxide thickness. We also present data of the surface passivation of these SiO2/SiN stacks after storage in the dark for several weeks.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 3 )

Date of Publication:

Jan 2010

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