By Topic

Quantum mechanical effect on determining threshold voltage of trigate FinFET using self-consistent analysis

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Amin, E.M. ; Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh ; Baten, M.Z. ; Islam, Raisul ; Khosru, Q.D.M.

The quantum definition based threshold voltage has been evaluated for triple-gate (TG) SOI FinFETs using self-consistent Schrodinger-Poisson solver. Although a new quantum definition of threshold voltage for multiple gate SOI MOSFETs has been provided in recent literature, in-depth analysis of quantization effects on threshold voltage calculation for highly scaled TG FinFETs is yet to be done. In this paper, the electrostatics of the device has been explored from a quantum mechanical point of view for variation in silicon film thickness in the sub 10 nm regime. Also the self-consistent solver, which takes wave function penetration and other quantum mechanical (QM) effects into account, has been utilized here to establish the capacitance-voltage (C-V) characteristics and a modified approach has been proposed for threshold voltage calculation.

Published in:

TENCON 2009 - 2009 IEEE Region 10 Conference

Date of Conference:

23-26 Jan. 2009