Referenced Items are not available for this document.
Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation at 0.3 V may achieve a 97% reduction in switching energy compared to conventional transistors. The process technology described in this article takes advantage of the capacitance and performance benefits of thin-body silicon-on-insulator devices, combined with a workfunction engineered mid-gap metal gate.
Published in:
Proceedings of the IEEE
(Volume:98
,
Issue:
2
)
Date of Publication: Feb. 2010
- Page(s):
- 333 - 342
- ISSN :
- 0018-9219
- INSPEC Accession Number:
- 11074177
- Digital Object Identifier :
- 10.1109/JPROC.2009.2034476
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 22 January 2010
- Issue Date :
- Feb. 2010
- Sponsored by :
- IEEE
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