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Based on theoretical and experimental investigation of a compound buried layer SOI with a single window in the upper buried oxide layer (SWCBL SOI), further research on the compound buried layer SOI with double windows (DWCBL SOI) is proposed. Higher concentration interface holes under the drain more effectively enhance the electric field of the lower buried oxide layer, resulting in a higher breakdown voltage (BV) of the device. With the same thicknesses of 20 ??m top silicon layer and 3 ??m buried oxide layer, the BV of the DWCBL increases to 1040 from 798 V of the SWCBL and 622 V of the conventional SOI, maintaining the low self-heating effect.