Skip to Main Content
In this work, Ge MOS capacitors with Y2O3 gate dielectric were fabricated. The effects of annealing in N2, NH3 O2 or NO ambient were investigated. Experimental results demonstrated that the NO annealing could improve both electrical properties and reliability of Ge MOS devices with Y2O3 dielectric. On the other hand, the NH3 annealing resulted in H-related traps while the O2 annealing suffered from extra GeOx growth, thus both degrading the performance of the devices.