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ZnO based thin-film transistor with high-κ gadolinium and praseodymium oxide as gate dielectric

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4 Author(s)
Hsiang-Chun Wang ; Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan ; Che-Kai Lin ; Chiu, Hsien-Chin ; Kuang-Po Hsueh

In this work, we compare the electrical and radio frequency characteristics of top-gate ZnO TFTs with praseodymium oxide layer (Pr2O3) and Gadolinium oxide layer (Gd2O3). The source/drain region of ZnO thin-film transistor is treated by simple O2 plasma instead of complicated processes, such as ion implantation and activation. By O2 plasma treatment, the source/drain series resistance successfully reduced. With Pr2O3 and Gd2O3, high dielectric constant (high-κ) insulator gate dielectrics, gate leakage current, On/OFF current ratio, and radio frequency performance successfully improved to their use for portable, battery powered, and circuit design applications. The coupling of the gate electric field is enhanced by using high-κ gate dielectrics.

Published in:

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Date of Conference:

25-27 Dec. 2009

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