By Topic

Study on electrical characteristics of amorphous InGaZnO MOS capacitors with High κ HfOxNy gate dielectric

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Xingsheng Tong ; Dept. of Electromachine Eng., Jianghan Univ., Wuhan, China ; Zou, Xiao

High κ HfOxNy gate dielectric film is deposited on amorphous InGaZnO (a-IGZO) by radio frequency reactive sputtering HfO2 target in N2 ambient. The κ-value is approximately 1.5 times higher than pure HfO2 owing to the existence of Hf-N bond. The results of SIMS, AFM and electrical properties measurement also indicate that nitrogen incorporation into HfO2 ameliorate the surface morphology of dielectric film, suppress the atom diffusion at the interface, reduce the hysteresis, decrease the gate leakage current, thus enhance device performance.

Published in:

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Date of Conference:

25-27 Dec. 2009