Cart (Loading....) | Create Account
Close category search window

Recent progress in research of structural defects in 6H-SiC single crystals

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Xiangang Xu ; State Key Lab. of Crystal Mater., Shandong Univ., Jinan, China ; Gao, Yuqiang ; Hu, Xiaobo ; Wanxia Huang
more authors

In this paper, we introduce the recent progress in research of structural defects in 6H-SiC single crystals. Two kinds of typical structural defects in 6H-SiC single crystals were investigated. Elementary screw dislocations were observed by back-reflection synchrotron radiation topography (BRSRT). The density of elementary screw dislocation was measured to be in the magnitude order of 104/cm2. Based on the strain field of screw dislocation, the synchrotron topographs of an elementary screw dislocation and a screw dislocation with Burgers vector 2c were simulated by ray-tracing method. Simulation results confirmed that almost all the white dots in synchrotron topograph corresponded to elementary screw dislocations. Basal plane bending was detected by high resolution X-ray diffractometry (HRXRD) and transmission synchrotron white-beam x-ray topography (SWBXT). HRXRD reveals that the (0001) Si face is a concave sphere and SWBXT shows that the shapes of Laue spots are different from that of X-ray illumination source. Based on the sphere curvature model of (0001) wafer for 6H-SiC single crystal, the shapes of Laue spots were simulated. The results are in well agreement with the experimental observations.

Published in:

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Date of Conference:

25-27 Dec. 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.