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In this paper, a simple and accurate analytical model for current-voltage and Transconductance characteristics of AlmGa1-m/GaN modulation doped field effect transistors (MODFETs) devices is presented. In proposed model, the effects of spontaneous and piezoelectric polarization at the hetero-interface and gate-voltage dependence of the Fermi level are considered. Variation of drain current after saturation, parasitic resistance of drain and source, field-dependent mobility, are contained in the model and gate to source dependant is utilized for the low field mobility. By implement model in MATLAB current-voltage characteristics and transconductance have been obtained. The agreement between the model and experimental result validate the proposed analytical model.
Date of Conference: 25-27 Dec. 2009