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A look at the phenomenon of charge multiplication in silicon radiation detector within the concept of dynamic focusing of the electric field

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3 Author(s)
Yu. Tsyganov ; Lab. of Nucl. Reactions, JINR, Dubna, Russia ; W. Kushniruk ; A. Polyakov

The spectra of 34S and 40Ar ions measured with silicon detectors were analyzed within the concept of dynamic focusing of the electric field. The ionization constant b was obtained for different fields. An estimation of the hot electrons temperature was carried out. A reasonable scenario for the development of charge multiplication process is suggested, taking into account the influence of initial electron-hole concentration on the formation of the hot carriers subsystem

Published in:

IEEE Transactions on Nuclear Science  (Volume:43 ,  Issue: 5 )