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A 1W, 900MHz class-F RF power amplifier with 56% PAE in 0.18-um CMOS technology

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3 Author(s)
Javidan, J. ; EE Dept., Sharif U. of T., Tehran, Iran ; Torkzadeh, P. ; Atarodi, M.

The poor passive devices in a CMOS process and low breakdown oxide voltage of CMOS power transistor are major challenging issues in design and implementation of high power PAs, specially in deep sub-micron CMOS technology. In order to alleviate these problems, a thick oxide cascode CMOS PA with new matching network configuration is presented. The designed power amplifier exhibits a power-added efficiency (PAE) of 56% at the output frequency band of 900 MHz and maximum power of 29.8 dBm. The designed PA is implemented in Agilent ADS environment using 0.18 um TSMC CMOS technology.

Published in:

Microelectronics, 2008. ICM 2008. International Conference on

Date of Conference:

14-17 Dec. 2008