Skip to Main Content
The poor passive devices in a CMOS process and low breakdown oxide voltage of CMOS power transistor are major challenging issues in design and implementation of high power PAs, specially in deep sub-micron CMOS technology. In order to alleviate these problems, a thick oxide cascode CMOS PA with new matching network configuration is presented. The designed power amplifier exhibits a power-added efficiency (PAE) of 56% at the output frequency band of 900 MHz and maximum power of 29.8 dBm. The designed PA is implemented in Agilent ADS environment using 0.18 um TSMC CMOS technology.
Date of Conference: 14-17 Dec. 2008