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0.18 µm fully integrated 900 MHz CMOS LNA with input and output on-chip matching for multi-standard mobile receiver

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5 Author(s)
Mustaffa, M.T. ; Sch. of Electr. Eng., Victoria Univ., Melbourne, VIC, Australia ; Zayegh, A. ; Veljanovski, R. ; Stojcevksi, A.
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This paper presents a fully integrated single-ended low noise amplifier (LNA) for GSM (GSM850 and GSM900) and UMTS (UMTS Band V and VI). The design and implementation is based on inductively-degenerated common-source (IDCS) using 0.18 μm CMOS technology with on-chip inductors at the input circuit for input matching and extra on-chip RL components at load tank for output matching. Post layout simulation results shows a power gain of 10.07-dB, a noise figure of 2.4-dB and an input and output return losses well below -10-dB at the center frequency of 900-MHz. The current consumption for this circuit is 7.1-mA from a voltage supply of 1.8-V.

Published in:

Microelectronics, 2008. ICM 2008. International Conference on

Date of Conference:

14-17 Dec. 2008

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