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This paper presents a fully integrated single-ended low noise amplifier (LNA) for GSM (GSM850 and GSM900) and UMTS (UMTS Band V and VI). The design and implementation is based on inductively-degenerated common-source (IDCS) using 0.18 μm CMOS technology with on-chip inductors at the input circuit for input matching and extra on-chip RL components at load tank for output matching. Post layout simulation results shows a power gain of 10.07-dB, a noise figure of 2.4-dB and an input and output return losses well below -10-dB at the center frequency of 900-MHz. The current consumption for this circuit is 7.1-mA from a voltage supply of 1.8-V.