Cart (Loading....) | Create Account
Close category search window
 

Improvement of carrier power to third-order intermodulation distortion power ratio in CMOS distributed amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
El-Khatib, Z. ; Dept. of Electron., Carleton Univ., Ottawa, ON, Canada ; MacEachern, L. ; Mahmoud, S.A.

The design of a fully-integrated CMOS linearized distributed amplifier (DA) architectures with broadband linearization and a tunable linearity capability for ultra-wideband applications are presented. DA IIP3 linearity is improved by using feedforward, multi-tanh and cross-quad feedback distortion cancellation based CMOS DA gain cells. Simulations were performed in CMOS 0.18 ¿m process technology and the results show that reducing the IMD3 products of the linearized CMOS DA which improves the linearized DA C/IM3 power ratio.

Published in:

Microelectronics, 2008. ICM 2008. International Conference on

Date of Conference:

14-17 Dec. 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.