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The effect of deposition temperature on the electrical, optical, structural, and morphological properties of indium doped zinc oxide thin films, ZnO:In, deposited by the chemical spray technique have been studied in this work. The starting solution was prepared using zinc pentanedionate and indium chloride as Zn and In precursors, respectively. Ethyl alcohol was utilized as solvent. The films were deposited at a temperature interval between 450 and 525Â°C. The X-ray diffraction patterns show that the films are polycrystalline, having a preferential orientation along the direction. The scanning electron micrographs, SEM, clearly show the existence of a textured surface. The lowest electrical resistivity obtained was around 3Ã10-3 Â¿cm, and the optical transmittance in the visible region was higher than 75%.