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Self-Heating Effect on Bias-Stressed Reliability for Low-Temperature a-Si:H TFT on Flexible Substrate

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4 Author(s)
Shih-Chin Kao ; Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Hsiao-Wen Zan ; Jung-Jie Huang ; Bo-Cheng Kung

Hydrogenated amorphous silicon thin-film transistors on colorless polyimide substrates were successfully fabricated at a low process temperature (160°C). The gate leakage current is as low as 10-13 A, while the field-effect mobility is 0.42 cm2V-1 · s-1, and the subthreshold swing is 0.77 V/dec. Using bias-temperature stress on devices with different channel widths, the enhancement of self-heating effect on bias-stressed reliability is investigated for the first time. Elevated temperature due to self-heating effect is estimated either by extending the bias-stressed model or by modifying the thermal equivalent circuit model. Degradation of device reliability on a bent substrate is also significant when self-heating effect is incorporated.

Published in:

Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 3 )

Date of Publication:

March 2010

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