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A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging

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4 Author(s)
Chen, A.Y.-K. ; Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA ; Baeyens, Y. ; Young-Kai Chen ; Jenshan Lin

This letter presents a low-power linear and wideband two-stage millimeter-wave low-noise amplifier (LNA) fabricated in a low-cost 0.18 ??m SiGe BiCMOS technology. Design techniques utilized to optimize the gain and NF and to achieve high linearity and wideband at W-band are addressed. The LNA achieves a peak power gain of 14.5 dB at 77 GHz with a 3 dB bandwidth of 14.5 GHz from 69 to 83.5 GHz. The measured NF is 6.9 dB at 77 GHz and is lower than 8 dB from 64 to 81 GHz. Both input and output return losses are better than 11 dB and 17 dB at 77 GHz, respectively. The measured input 1 dB compression point is -11.4 dBm at 77 GHz with low power consumption of only 37 mW.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:20 ,  Issue: 2 )