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CMOS RF Power Amplifier for UHF Stationary RFID Reader

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4 Author(s)
Joo, T. ; Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea ; Hongtak Lee ; Sunbo Shim ; Songcheol Hong

A CMOS power amplifier (PA) for a UHF (860-960 MHz) stationary RFID reader is presented. To design a high power and power efficient CMOS PA, quasi four pair structure and integrated passive device (IPD) transformers are used. An amplitude modulation is performed through the cascode gate with a pulse shaping filter. The chips are fabricated in a 0.18 ??m CMOS process and IPD. Measurements show output power of 32.8-33.37 dBm and the power added efficiency (PAE) of 51.8-56.1% with the supply voltage 3.0 V.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:20 ,  Issue: 2 )